2n 2218a- 2 n2219 a 2 n 222 1 a - 2 n2 2 2 2a january 1989 hig h spe ed switc he s the 2n22 18a, 2n2219a, 2n2221a and 2 n222 2a are sil icon pla nar e pitax ia l np n tr ansi stor s in je dec to-39 (for 2n22 18a and 2n2219a) and in jedec to-18 (for 2n222 1a and 2N2222A) metal cases . they are designed for high-spe ed switc hin g a ppli - cation s at coll ector c urre nts up to 5 00 ma , and fea - ture use fu l curr ent ga in o ve r a wi de r ange o f coll ec - tor cur re nt, low le ak age cur rents an d lo w sa turatio n voltag es. abs o l ute m ax i m um rat i n g s sy m bol p a r a m e t e r v a l ue u n it v cb o coll ecto r-base voltage ( i e =0 ) 75 v v ce o col lect or-emitt er v oltage ( i b =0 ) 40 v v ebo emi tter -base voltag e ( i c =0 ) 6 v i c colle ctor curre nt 0.8 a p to t to tal power dissipation a t t am b 25 c fo r 2n2218 a and 2n2 219a fo r 2n2221 a and 2n2 222a at t ca s e 25 c fo r 2n2218 a and 2n2 219a fo r 2n2221 a and 2n2 222a 0.8 0.5 3 1.8 w w w w t st g sto rage te mp er at ur e 6 5 t o 2 00 c t j junction t em pera tu re 175 c 2n2218a/2 n22 19a appro ved to cecc 50002-1 00, 2n2221a /2n2 22 2a a ppro ved to cecc 50002 -101 avail ab le on reques t. d esc r i pt i o n to-39 i n te rna l s c h e m a t i c di ag r a m t o-18 1/8 http://
e l e c tri c a l char acte r i s t i c s (t am b =2 5 c unless otherwise specified) s y m bol p a r a m e t e r t e s t c ond i t io n s m i n. ty p . m a x . u n it i cbo colle ctor cut off c urr ent (i e =0) v cb =6 0 v v cb =6 0 v t am b =1 5 0 c 10 10 na m a i ce x colle ctor cut off c urr ent (v be = 3 v) v ce =6 0 v 1 0 na i eb o emit ter cutoff curre nt (i c =0 ) v eb =3 v 1 0 na i bex base cutoff curre nt (v be = 3 v) v ce =6 0 v 2 0 na v ( b r) cb o coll ecto r-base bre akdow n voltage (i e =0 ) i c =1 0 m a7 5 v v ( b r) ceo * col lect or-emitt er b reakd own voltage (i b =0 ) i c =1 0 ma 4 0 v v ( br ) ebo emi ttte r-base breakdown voltage (i c =0 ) i e =1 0 m a6 v v c e ( s at ) * col lect or-emitt er s atur ation voltage i c =1 5 0 ma i c =5 0 0 ma i b =1 5 ma i b =5 0 ma 0.3 1 v v v b e ( s at ) * bas e-emitte r satu rati on voltage i c =1 5 0 ma i c =5 0 0 ma i b =1 5 ma i b =5 0 ma 0.6 1.2 2 v v h fe * dc curre nt g ain fo r 2n2218a i c = 0.1 ma i c =1 ma i c =1 0 ma i c =1 5 0 ma i c =5 0 0 ma i c =1 5 0 ma i c =1 0 ma t am b = 5 5 c an d 2n2221a v ce =1 0 v v ce =1 0 v v ce =1 0 v v ce =1 0 v v ce =1 0 v v ce =1 v v ce =1 0 v 20 25 35 40 25 20 15 120 h fe * dc curre nt g ain fo r 2n2219a i c = 0.1 ma i c =1 ma i c =1 0 ma i c =1 5 0 ma i c =5 0 0 ma i c =1 5 0 ma i c =1 0 ma t am b = 5 5 c an d 2N2222A v ce =1 0 v v ce =1 0 v v ce =1 0 v v ce =1 0 v v ce =1 0 v v ce =1 v v ce =1 0 v 35 50 75 10 0 40 50 35 300 * pul se d : puls e durat io n = 30 0 m s, duty cyc le = 1 %. the rmal data 2n2218a 2n2219a 2n2221a 2N2222A r th j- c as e r t h j - am b th er ma l resista nce junction-case th er ma l resista nce ju nction -ambien t ma x ma x 50 c/ w 187.5 c/ w 83.3 c/ w 300 c/ w 2n 22 18a - 2n 22 19a - 2n 22 21a - 2n 22 22a 2/8
e l e c tri c a l char acte r i s t i c s (continued) s y m bol p a r a m e t e r t e s t c ond i t io n s m i n. ty p . m a x . u n it h fe small signal curre nt g ain i c =1 m a f = 1 khz fo r 2n2218a fo r 2n2219a i c =1 0 m a f = 1 khz fo r 2n2218a fo r 2n2219a v ce =1 0 v an d 2n2221a an d 2N2222A v ce =1 0 v an d 2n2221a an d 2N2222A 30 50 50 75 150 300 300 375 f t tra nsition f re que nc y i c =2 0 m a f = 100 mhz fo r 2n2218a fo r 2n2219a v ce =2 0 v an d 2n2221a an d 2N2222A 25 0 30 0 mhz mhz c ebo emi tter -base capac itance i c =0 f = 100 khz v eb = 0.5 v 2 5 p f c cb o coll ecto r-base capa cita nce i e =0 f = 100 khz v cb =1 0 v 8 p f r e( hi e) real pa rt o f i npu t im ped ance i c =2 0 ma f = 300 mhz v ce =2 0 v 6 0 w n f noise f ig ur e i c =1 0 0 m a r 9 =1 k w v ce =1 0 v f = 1 khz 4d b h ie * * in put imp eda nc e i c =1 ma fo r 2n2218a fo r 2n2219a i c =1 0 ma fo r 2n2218a fo r 2n2219a v ce =1 0 v an d 2n2221a an d 2N2222A v ce =1 0 v an d 2n2221a an d 2N2222A 1 2 0.2 0.25 3.5 8 1 1.25 w w w w h re * * reverse voltage ratio i c =1 ma fo r 2n2218a fo r 2n2219a i c =1 0 ma fo r 2n2218a fo r 2n2219a v ce =1 0 v and 2n2221a and 2N2222A v ce =1 0 v and 2n2221a and 2N2222A 5x 10 4 8x 10 4 2.5x10 4 4x 10 4 h oe * * out put admittance i c =1 ma fo r 2n2218a fo r 2n2219a i c =1 0 ma fo r 2n2218a fo r 2n2219a v ce =1 0 v and 2n2221a and 2N2222A v ce =1 0 v and 2n2221a and 2N2222A 3 5 10 25 15 35 100 200 m s m s m s m s t d * * * delay t im e i c =1 5 0 ma i b1 =1 5 ma v cc =3 0 v v bb = 0.5 v 10 ns t r * * * rise t im e i c =1 5 0 ma i b1 =1 5 ma v cc =3 0 v v bb = 0.5 v 25 ns t s * * * sto rage ti me i c =1 5 0 ma i b1 = v cc =3 0 v i b2 =1 5 ma 225 ns t f * * * fal l t im e i c =1 5 0 ma i b1 = v cc =3 0 v i b2 =1 5 ma 60 ns r bb ' c b' c fe edb ack t im e cons tant i c =2 0 ma f = 31.8 mh z v ce = 20 v 150 ps ** f = 1 khz *** see test circuit. 2n 221 8a -2 n 221 9a -2 n 222 1a -2 n 222 2a 3/8
contours of constant narrow band noise figure. switching time vs. collector current. normaliz ed dc curr ent gain. collecto r-em it ter saturatio n volta ge. 2n 22 18a - 2n 22 19a - 2n 22 21a - 2n 22 22a 4/8
test cir cuit fot t d ,t r. pulse genera tor : to osci ll osco pe : t r 20 ns t r 5.0 ns pw 200 ns z in < 100 k w z in =5 0 w c in 12 pf test cir cuit fot t d ,t r. pulse gener ator : to osci ll osco pe : pw 10 m st r <5 . 0 ns z in =5 0 w z in > 100 k w t c 5.0 ns c in 12 pf 2n 221 8a -2 n 221 9a -2 n 222 1a -2 n 222 2a 5/8
dim. mm inch min. typ. max. min. typ. max. a 12.7 0.500 b 0.49 0.019 d 5.3 0.208 e 4.9 0.193 f 5.8 0.228 g 2.54 0.100 h 1.2 0.047 i 1.16 0.045 l4 5 o 45 o l g i da f e b h c to-18 mechanical data 0016043 2n 22 18a - 2n 22 19a - 2n 22 21a - 2n 22 22a 6/8
dim. mm inch min. typ. max. min. typ. max. a 12.7 0.500 b 0.49 0.019 d 6.6 0.260 e 8.5 0.334 f 9.4 0.370 g 5.08 0.200 h 1.2 0.047 i 0.9 0.035 l4 5 o (typ.) l g i da f e b h to39 mechanical data p008b 2n 221 8a -2 n 221 9a -2 n 222 1a -2 n 222 2a 7/8
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a 2n 22 18a - 2n 22 19a - 2n 22 21a - 2n 22 22a 8/8
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